mch6536 no.7645-1/8 applications ? mosfet gate drivers, low-frequency power ampli er, high-speed switching, motor drivers features ? composite type with a pnp transistor and an npn transistor contained in one package facilitating high-density mounting ? ultrasmall package permitting applied sets to be small and slim ? small on-resistance (ron) speci cations ( ) : pnp absolute maximum ratings at ta=25c parameter symbol conditions ratings unit collector-to-base voltage v cbo (--15)20 v collector-to-emitter voltage v ceo (--12)15 v emitter-to-base voltage v ebo (--)5 v collector current i c (--500)700 ma collector current (pulse) i cp (--1.0)1.4 a collector dissipation p c when mounted on ceramic substrate (600mm 2 0.8mm) 0.5 w total power dissipation p t when mounted on ceramic substrate (600mm 2 0.8mm) 0.55 w junction temperature tj 150 c storage temperature tstg --55 to +150 c package dimensions unit : mm (typ) 7022a-012 ordering number : EN7645b o2412 tkim/o0108 tiim tc-00001643/42004ea tsim ta-100667 sanyo semiconductors data sheet http://www.sanyosemi.com/en/network/ product & package information ? package : mcph6 ? jeita, jedec : sc-88, sc-70-6, sot-363 ? minimum packing quantity : 3,000 pcs./reel packing type : tl marking electrical connection ej lot no. lot no. tl 1 : emitter1 (pnp tr) 2 : base1 (pnp tr) 3 : collector2 (npn tr) 4 : emitter2 (npn tr) 5 : base2 (npn tr) 6 : collector1 (pnp tr) sanyo : mcph6 2.0 0.25 1.6 2.1 0.25 0.85 0.3 0.65 0.15 0 to 0.02 0.07 654 123 654 123 5 6 1 4 23 mch6536-tl-e mch6536 pnp / npn epitaxial planar silicon transistor push-pull circuit applications
mch6536 no.7645-2/8 electrical characteristics at ta=25c parameter symbol conditions ratings unit min typ max collector cutoff current i cbo v cb =(--12)15v, i e =0a (--)100 na emitter cutoff current i ebo v eb =(--)4v, i c =0a (--)100 na dc current gain h fe v ce =(--)2v, i c =(--)10ma 300 (700)800 gain-bandwidth product f t v ce =(--)2v, i c =(--)50ma (490)330 mhz output capacitance cob v cb =(--)10v, f=1mhz (4)3.2 pf collector-to-emitter saturation voltage v ce (sat) i c =(--)200ma, i b =(--)10ma (--)150 (--)300 mv base-to-emitter saturation voltage v be (sat) i c =(--)200ma, i b =(--)10ma (--)0.9 (--)1.2 v collector-to-base breakdown voltage v (br)cbo i c =(--)10 a, i e =0a (--15)20 v collector-to-emitter breakdown voltage v (br)ceo i c =(--)1ma, r be = (--12)15 v emitter-to-base breakdown voltage v (br)ebo i e =(--)10 a, i c =0a (--)5 v turn-on time t on see speci ed test circuit. 30 ns storage time t stg (57)77 ns fall time t f (30)40 ns switching time test circuit [pnp] [npn] ordering information device package shipping memo mch6536-tl-e mcph6 3,000pcs./reel pb free v r r b v cc = --5v v be =5v ++ 50 input outpu t r l 220 f 470 f pw=20 s i b1 d.c. 1% i b2 i c =20i b1 = --20i b2 = --400ma v r r b v cc =5v v be = --5v + + 50 input outpu t r l 220 f 470 f pw=20 s i b1 d.c. 1% i b2 i c =20i b1 = --20i b2 =500ma
mch6536 no.7645-3/8 [pnp] [npn] [pnp] [npn] [pnp] [npn] 0 --200 --600 --300 --400 --500 --100 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 i c -- v be it05202 v ce = --2v 25 c --25 c ta=75 c base-to-emitter voltage, v be -- v collector current, i c -- m a --1.0 2 3 57 2 3 57 2 3 57 --10 --100 2 7 3 5 7 100 1000 --1000 h fe -- i c it05203 v ce = --2v - -25 c ta=75 c 25 c collector current, i c -- m a dc current gain, h fe --100 --10 2 3 5 7 --1000 2 3 5 7 v ce (sat) -- i c it05204 --1.0 23 57 23 57 23 57 --10 --100 --1000 i c / i b =20 ta=75 c 25 c --25 c collector current, i c -- m a collector-to-emitter saturation voltage, v ce (sat) -- mv 100 200 300 400 600 500 700 800 0 0.2 0.4 0.6 0.8 1.0 1.2 0 it05491 v ce =2v ta=75 c 25 c --25 c i c -- v be base-to-emitter voltage, v be -- v collector current, i c -- ma 3 5 7 100 2 3 5 7 1000 1.0 23 57 10 23 57 100 23 57 1000 it05492 v ce =2v ta=75 c --25 c 25 c h fe -- i c collector current, i c -- ma dc current gain, h fe 1.0 23 57 10 23 57 100 23 57 1000 10 2 3 5 7 100 2 3 5 7 1000 it05493 i c / i b =20 ta=75 c --25 c 25 c v ce (sat) -- i c collector current, i c -- ma collector-to-emitter saturation voltage, v ce (sat) -- mv [pnp] [npn] 0 0 --200 --0.5 --20 --40 --60 --80 --100 --120 --140 --160 --180 --1.0 --2.0 --1.5 i c -- v ce it05201 --1.0ma --0.7ma --0.5ma --0.6ma --0.4ma --0.3ma --0.2ma --0.1ma i b =0ma --0.9ma --0.8ma collector-to-emitter voltage, v ce -- v collector current, i c -- m a 0 0.4 0.8 1.2 1.6 0.2 0.6 1.0 1.4 1.8 2.0 it05490 0 40 80 120 160 200 20 60 100 140 180 i b =0ma 0.1ma 0.2ma 0.3ma 0.4ma 0.5ma 0.6ma 0.7ma 0.8ma 1.0ma 0.9ma i c -- v ce collector-to-emitter voltage, v ce -- v collector current, i c -- ma
mch6536 no.7645-4/8 it05206 --1.0 357 --10 2357 2357 2 --100 --1000 --10 --1.0 --0.1 7 5 3 2 7 5 3 2 v be (sat) -- i c ta= --25 c 25 c 75 c i c / i b =20 collector current, i c -- m a base-to-emitter saturation voltage, v be (sat) -- v 27 35 --10 23 --1.0 27 35 --0.1 10 1.0 2 3 7 5 2 3 5 cob -- v cb it05207 f=1mhz collector-to-base voltage, v cb -- v output capacitance, cob -- pf --1.0 5 3 100 1000 7 5 3 2 --1000 --100 27 5 3 27 5 3 27 --10 f t -- i c it05208 v ce = --2v collector current, i c -- m a gain-bandwidth product, f t -- mhz 1.0 23 57 10 23 57 100 23 57 1000 100 2 3 5 7 1000 2 3 5 7 10000 it05495 ta= --25 c 75 c 25 c i c / i b =20 v be (sat) -- i c collector current, i c -- ma base-to-emitter saturation voltage, v be (sat) -- mv 0.1 23 57 1.0 23 57 10 23 1.0 2 3 5 7 10 it05497 f=1mhz cob -- v cb output capacitance, cob -- pf collector-to-base voltage, v cb -- v 1.0 23 57 10 23 57 100 23 57 1000 5 7 100 2 3 5 7 it05496 v ce =2v f t -- i c collector current, i c -- ma gain-bandwidth product, f t -- mhz [pnp] [npn] [pnp] [npn] [pnp] [npn] [pnp] [npn] it05205 --1.0 --100 --10 2 3 57 2 3 57 2 3 57 --100 --1000 --10 7 5 3 2 --1000 7 5 3 2 v ce (sat) -- i c i c / i b =50 ta=75 c 25 c --25 c collector current, i c -- m a collector-to-emitter saturation voltage, v ce (sat) -- mv 1.0 23 57 10 23 57 100 23 57 1000 10 2 3 5 7 100 2 3 5 7 1000 it05494 i c / i b =50 ta=75 c --25 c 25 c v ce (sat) -- i c collector-to-emitter saturation voltage, v ce (sat) -- mv collector current, i c -- ma
mch6536 no.7645-5/8 0 0 ambient temperature, ta -- c p c -- ta collector dissipation, p c -- w it06387 0.7 0.6 0.5 0.55 0.4 0.3 0.2 0.1 40 20 100 120 60 80 140 160 total dissipation 1unit when mounted on ceramic substrate (600mm 2 ? 0.8mm) base current, i b -- ma ron -- i b on-resistance, ron -- f=1mhz --0.1 it06068 2 0.1 7 5 3 2 1.0 7 5 3 10 3 2 57 3 2 57 --1.0 --10 out in 1k 1k i b f=1mhz 0.1 0.1 it06067 7 5 3 2 10 7 5 3 2 7 5 3 2 1.0 100 3 2 57 3 2 57 1.0 10 out in 1k 1k i b ron -- i b base current, i b -- ma on-resistance, ron -- [pnp] [npn]
mch6536 no.7645-6/8 embossed taping speci cation mch6536-tl-e
mch6536 no.7645-7/8 outline drawing land pattern example mch6536-tl-e mass (g) unit 0.008 * for reference mm unit: mm 0.65 0.65 0.4 2.1 0.6
mch6536 ps no.7645-8/8 this catalog provides information as of october, 2012. speci cations and information herein are subject to change without notice. any and all sanyo semiconductor co.,ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. the products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. if you should intend to use our products for new introduction or other application different from current conditions on the usage of automotive device, communication device, office equipment, industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.) prior to the intended use. if there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer ' s products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer ' s products or equipment. sanyo semiconductor co.,ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein. regarding monolithic semiconductors, if you should intend to use this ic continuously under high temperature, high current, high voltage, or drastic temperature change, even if it is used within the range of absolute maximum ratings or operating conditions, there is a possibility of decrease reliability. please contact us for a confirmation. sanyo semiconductor co.,ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. it is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all sanyo semiconductor co.,ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of sanyo semiconductor co.,ltd. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo semiconductor co.,ltd. product that you intend to use. upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of sanyo semiconductor co.,ltd. or any third party. sanyo semiconductor co.,ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above.
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